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15 Apr 2010, 12:49 pm
NXP B.V. [read post]
7 Nov 2011, 7:29 pm
NXP B.V., C. [read post]
9 Sep 2010, 5:40 pm
This patent from NXP B.V. teaches a type of semiconductor nanowire channel design with low channel (nanowire) doping and highly doped source and drain regions forming Schottky-type barriers in a design which may be easier to fabricate at nanoscale dimensions. [read post]
4 Feb 2016, 6:40 am
NXP B.V. v. [read post]
4 Feb 2016, 6:40 am
NXP B.V. v. [read post]
4 Feb 2015, 12:16 pm
By: Thomas G. [read post]